Home / Single FETs, MOSFETs / ISC0805NLSATMA1

ISC0805NLSATMA1

Infineon Technologies

Product No:

ISC0805NLSATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-46

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 13A/71A TDSON

Quantity:

Delivery:

Payment:

In Stock : 4032

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.805

$1.805
10

$1.50005

$15.0005
100

$1.193675

$119.3675
500

$1.010059

$505.0295
1000

$0.857024

$857.024
2000

$0.814178

$1628.356

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of ISC0805NLSATMA1, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include ISC0805NLSATMA1 and the required quantity in the RFQ. GOOD can get the latest quotations of ISC0805NLSATMA1 without registration. ISC0805NLSATMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 40µA
Supplier Device Package	PG-TDSON-8-46
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.5W (Ta), 74W (Tc)
Series	OptiMOS™ 5
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 71A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISC0805N