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IV1Q12160T4

Inventchip

Product No:

IV1Q12160T4

Manufacturer:

Inventchip

Package:

TO-247-4

Batch:

-

Datasheet:

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Description:

SIC MOSFET, 1200V 160MOHM, TO-24

Quantity:

Delivery:

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Payment:

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In Stock : 106

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $17.1285

    $17.1285

  • 10

    $15.0879

    $150.879

  • 100

    $13.0492

    $1304.92

  • 500

    $11.825828

    $5912.914

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 885 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 195mOhm @ 10A, 20V
Product Status Active
Vgs(th) (Max) @ Id 2.9V @ 1.9mA
Supplier Device Package TO-247-4
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 138W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr Inventchip
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube

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