IXFB82N60P

IXYS

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IXFB82N60P

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PLUS264™

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Description:

MOSFET N-CH 600V 82A PLUS264

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	23000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	75mOhm @ 41A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 8mA
Supplier Device Package	PLUS264™
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	1250W (Tc)
Series	HiPerFET™, Polar
Package / Case	TO-264-3, TO-264AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFB82