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IXFC110N10P

IXYS

Product No:

IXFC110N10P

Manufacturer:

IXYS

Package:

ISOPLUS220™

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 60A ISOPLUS220

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 17mOhm @ 55A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 4mA
Supplier Device Package ISOPLUS220™
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 120W (Tc)
Series HiPerFET™, PolarHT™
Package / Case ISOPLUS220™
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Box
Base Product Number IXFC110N10

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