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IXFC110N10P

IXYS

Product No:

IXFC110N10P

Manufacturer:

IXYS

Package:

ISOPLUS220™

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Datasheet:

Description:

MOSFET N-CH 100V 60A ISOPLUS220

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	17mOhm @ 55A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 4mA
Supplier Device Package	ISOPLUS220™
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	120W (Tc)
Series	HiPerFET™, PolarHT™
Package / Case	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Box
Base Product Number	IXFC110N10