Home / Single FETs, MOSFETs / IXFH58N20Q

IXFH58N20Q

IXYS

Product No:

IXFH58N20Q

Manufacturer:

IXYS

Package:

TO-247AD (IXFH)

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Datasheet:

Description:

MOSFET N-CH 200V 58A TO247AD

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 29A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 4mA
Supplier Device Package	TO-247AD (IXFH)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	300W (Tc)
Series	HiPerFET™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFH58