Home / Single FETs, MOSFETs / IXFH80N65X2

IXFH80N65X2

IXYS

Product No:

IXFH80N65X2

Manufacturer:

IXYS

Package:

TO-247 (IXTH)

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 80A TO247

Quantity:

Delivery:

Payment:

In Stock : 70

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$13.319

$13.319
10

$12.2417

$122.417
100

$10.33923

$1033.923
500

$9.197444

$4598.722
1000

$8.436276

$8436.276

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 40A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 4mA
Supplier Device Package	TO-247 (IXTH)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	890W (Tc)
Series	HiPerFET™, Ultra X2
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFH80