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IXFN100N50Q3

IXYS

Product No:

IXFN100N50Q3

Manufacturer:

IXYS

Package:

SOT-227B

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 500V 82A SOT227B

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 49mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 6.5V @ 8mA
Supplier Device Package SOT-227B
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 960W (Tc)
Series HiPerFET™, Q3 Class
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Mfr IXYS
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXFN100

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