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IXFN200N10P

IXYS

Product No:

IXFN200N10P

Manufacturer:

IXYS

Package:

SOT-227B

Batch:

-

Datasheet:

pdf.png

Description:

MOSFET N-CH 100V 200A SOT-227B

Quantity:

Delivery:

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Payment:

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In Stock : 145

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $26.714

    $26.714

  • 10

    $24.6411

    $246.411

  • 100

    $21.041835

    $2104.1835

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 7.5mOhm @ 500mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 8mA
Supplier Device Package SOT-227B
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 680W (Tc)
Series HiPerFET™, Polar
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Box
Base Product Number IXFN200

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