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IXFN26N100P

IXYS

Product No:

IXFN26N100P

Manufacturer:

IXYS

Package:

SOT-227B

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Datasheet:

Description:

MOSFET N-CH 1000V 23A SOT-227B

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Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	197 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	390mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	6.5V @ 1mA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	595W (Tc)
Series	HiPerFET™, Polar
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFN26