Home / Single FETs, MOSFETs / IXFN32N100P

IXFN32N100P

IXYS

Product No:

IXFN32N100P

Manufacturer:

IXYS

Package:

SOT-227B

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 27A SOT-227B

Quantity:

Delivery:

Payment:

In Stock : 489

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$34.599

$34.599
10

$32.28005

$322.8005
100

$28.02728

$2802.728

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXFN32N100P, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXFN32N100P and the required quantity in your RFQ. IICSEMI provides the latest quote for IXFN32N100P without requiring registration. Latest information on IXFN32N100P: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXFN32N100P latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	320mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	6.5V @ 1mA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	690W (Tc)
Series	HiPerFET™, Polar
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFN32