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IXFN50N120SIC

IXYS

Product No:

IXFN50N120SIC

Manufacturer:

IXYS

Package:

SOT-227B

Batch:

-

Datasheet:

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Description:

SICFET N-CH 1200V 47A SOT227B

Quantity:

Delivery:

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Payment:

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In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $75.7055

    $75.7055

  • 10

    $68.6071

    $686.071

  • 100

    $61.51003

    $6151.003

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXFN50N120SIC, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXFN50N120SIC and the required quantity in your RFQ. IICSEMI provides the latest quote for IXFN50N120SIC without requiring registration. Latest information on IXFN50N120SIC: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXFN50N120SIC latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 20 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 2mA
Supplier Device Package SOT-227B
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) -
Series -
Package / Case SOT-227-4, miniBLOC
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Mfr IXYS
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number IXFN50

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