Home / Single FETs, MOSFETs / IXFN64N60P

IXFN64N60P

IXYS

Product No:

IXFN64N60P

Manufacturer:

IXYS

Package:

SOT-227B

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Datasheet:

Description:

MOSFET N-CH 600V 50A SOT227B

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	96mOhm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 8mA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	700W (Tc)
Series	HiPerFET™, Polar
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFN64