Home / Single FETs, MOSFETs / IXFQ12N80P

IXFQ12N80P

IXYS

Product No:

IXFQ12N80P

Manufacturer:

IXYS

Package:

TO-3P

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 12A TO3P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of IXFQ12N80P, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include IXFQ12N80P and the required quantity in the RFQ. GOOD can get the latest quotations of IXFQ12N80P without registration. IXFQ12N80P latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	850mOhm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 2.5mA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	360W (Tc)
Series	HiPerFET™, Polar
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFQ12