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IXFR200N10P

IXYS

Product No:

IXFR200N10P

Manufacturer:

IXYS

Package:

ISOPLUS247™

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 133A ISOPLUS247

Quantity:

Delivery:

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Payment:

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In Stock : 260

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $17.3375

    $17.3375

  • 10

    $15.93625

    $159.3625

  • 100

    $13.459505

    $1345.9505

  • 500

    $11.973173

    $5986.5865

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXFR200N10P, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXFR200N10P and the required quantity in your RFQ. IICSEMI provides the latest quote for IXFR200N10P without requiring registration. Latest information on IXFR200N10P: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXFR200N10P latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 9mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 8mA
Supplier Device Package ISOPLUS247™
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 300W (Tc)
Series HiPerFET™, Polar
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 133A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Box
Base Product Number IXFR200

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