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IXFT18N100Q3

IXYS

Product No:

IXFT18N100Q3

Manufacturer:

IXYS

Package:

TO-268AA

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Datasheet:

Description:

MOSFET N-CH 1000V 18A TO268

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	660mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	6.5V @ 4mA
Supplier Device Package	TO-268AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	830W (Tc)
Series	HiPerFET™, Q3 Class
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFT18