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IXFT52N50P2

IXYS

Product No:

IXFT52N50P2

Manufacturer:

IXYS

Package:

TO-268AA

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 500V 52A TO268

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 120mOhm @ 26A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 4mA
Supplier Device Package TO-268AA
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 960W (Tc)
Series HiPerFET™, PolarP2™
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Mfr IXYS
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXFT52

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