Home / Single FETs, MOSFETs / IXTA08N100D2

IXTA08N100D2

IXYS

Product No:

IXTA08N100D2

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 800MA TO263

Quantity:

Delivery:

Payment:

In Stock : 12577

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.527

$2.527
10

$2.27145

$22.7145
100

$1.82571

$182.571
500

$1.499955

$749.9775
1000

$1.242828

$1242.828
2000

$1.157119

$2314.238
5000

$1.114255

$5571.275

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14.6 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	21Ohm @ 400mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	60W (Tc)
Series	Depletion
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	800mA (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTA08