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IXTA1R4N120P

IXYS

Product No:

IXTA1R4N120P

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1200V 1.4A TO263

Quantity:

Delivery:

Payment:

In Stock : 140

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$5.453

$5.453
10

$4.8963

$48.963
100

$4.01166

$401.166
500

$3.41506

$1707.53
1000

$2.880172

$2880.172
2000

$2.736162

$5472.324

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	666 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	24.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 100µA
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	86W (Tc)
Series	Polar
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1