Home / Single FETs, MOSFETs / IXTA1R6N100D2

IXTA1R6N100D2

IXYS

Product No:

IXTA1R6N100D2

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 1.6A TO263

Quantity:

Delivery:

Payment:

In Stock : 150

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.9545

$2.9545
10

$2.6524

$26.524
100

$2.17303

$217.303
500

$1.84984

$924.92
1000

$1.560109

$1560.109
2000

$1.482104

$2964.208
5000

$1.426387

$7131.935

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXTA1R6N100D2, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXTA1R6N100D2 and the required quantity in your RFQ. IICSEMI provides the latest quote for IXTA1R6N100D2 without requiring registration. Latest information on IXTA1R6N100D2: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXTA1R6N100D2 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	100W (Tc)
Series	Depletion
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1