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IXTA3N100D2

IXYS

Product No:

IXTA3N100D2

Manufacturer:

IXYS

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 3A TO263

Quantity:

Delivery:

Payment:

In Stock : 304

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$5.415

$5.415
10

$4.8621

$48.621
100

$3.983825

$398.3825
500

$3.391329

$1695.6645
1000

$2.860156

$2860.156
2000

$2.717152

$5434.304

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	37.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5Ohm @ 1.5A, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	125W (Tc)
Series	Depletion
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTA3