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IXTH3N120

IXYS

Product No:

IXTH3N120

Manufacturer:

IXYS

Package:

TO-247 (IXTH)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 1200V 3A TO247

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.5Ohm @ 500mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-247 (IXTH)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 200W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Box
Base Product Number IXTH3

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