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IXTH52N65X

IXYS

Product No:

IXTH52N65X

Manufacturer:

IXYS

Package:

TO-247 (IXTH)

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Datasheet:

Description:

MOSFET N-CH 650V 52A TO247

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Product Information

Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	68mOhm @ 26A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-247 (IXTH)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	660W (Tc)
Series	Ultra X
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTH52