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IXTH6N100D2

IXYS

Product No:

IXTH6N100D2

Manufacturer:

IXYS

Package:

TO-247 (IXTH)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 1000V 6A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 673

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.569

    $8.569

  • 10

    $7.7406

    $77.406

  • 100

    $6.408225

    $640.8225

  • 500

    $5.580224

    $2790.112

  • 1000

    $4.86019

    $4860.19

  • 2000

    $4.680184

    $9360.368

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXTH6N100D2, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXTH6N100D2 and the required quantity in your RFQ. IICSEMI provides the latest quote for IXTH6N100D2 without requiring registration. Latest information on IXTH6N100D2: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXTH6N100D2 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package TO-247 (IXTH)
Drain to Source Voltage (Vdss) 1000 V
Power Dissipation (Max) 300W (Tc)
Series Depletion
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) -
Package Tube
Base Product Number IXTH6

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