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IXTM67N10

IXYS

Product No:

IXTM67N10

Manufacturer:

IXYS

Package:

TO-204AE

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Datasheet:

Description:

MOSFET N-CH 100V 67A TO204AE

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	25mOhm @ 33.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 4mA
Supplier Device Package	TO-204AE
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	300W (Tc)
Series	GigaMOS™
Package / Case	TO-204AE
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	67A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTM67