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IXTP60N10T

IXYS

Product No:

IXTP60N10T

Manufacturer:

IXYS

Package:

TO-220-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 60A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 21

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.5745

    $2.5745

  • 10

    $2.30945

    $23.0945

  • 100

    $1.8563

    $185.63

  • 500

    $1.525149

    $762.5745

  • 1000

    $1.2637

    $1263.7

  • 2000

    $1.176546

    $2353.092

  • 5000

    $1.13297

    $5664.85

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXTP60N10T, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXTP60N10T and the required quantity in your RFQ. IICSEMI provides the latest quote for IXTP60N10T without requiring registration. Latest information on IXTP60N10T: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXTP60N10T latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 50µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 176W (Tc)
Series Trench
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr IXYS
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTP60

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