Home / Single FETs, MOSFETs / IXTP6N100D2

IXTP6N100D2

IXYS

Product No:

IXTP6N100D2

Manufacturer:

IXYS

Package:

TO-220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 6A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 421

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$7.277

$7.277
10

$6.57305

$65.7305
100

$5.44179

$544.179
500

$4.7386

$2369.3
1000

$4.127161

$4127.161
2000

$3.974306

$7948.612

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	300W (Tc)
Series	Depletion
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTP6