Home / Single FETs, MOSFETs / IXTQ200N10T

IXTQ200N10T

IXYS

Product No:

IXTQ200N10T

Manufacturer:

IXYS

Package:

TO-3P

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 200A TO3P

Quantity:

Delivery:

Payment:

In Stock : 14

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$6.8305

$6.8305
10

$6.17405

$61.7405
100

$5.111475

$511.1475
500

$4.450959

$2225.4795
1000

$3.876646

$3876.646
2000

$3.733072

$7466.144

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXTQ200N10T, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXTQ200N10T and the required quantity in your RFQ. IICSEMI provides the latest quote for IXTQ200N10T without requiring registration. Latest information on IXTQ200N10T: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXTQ200N10T latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5.5mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	550W (Tc)
Series	Trench
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTQ200