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IXTT10P60

IXYS

Product No:

IXTT10P60

Manufacturer:

IXYS

Package:

TO-268AA

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Datasheet:

Description:

MOSFET P-CH 600V 10A TO268

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-268AA
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	300W (Tc)
Series	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTT10