Home / Single FETs, MOSFETs / IXTU02N50D

IXTU02N50D

IXYS

Product No:

IXTU02N50D

Manufacturer:

IXYS

Package:

TO-251AA

Batch:

Datasheet:

Description:

MOSFET N-CH 500V 200MA TO251

Quantity:

Delivery:

Payment:

In Stock : 366

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.8145

$1.8145
10

$1.6283

$16.283
100

$1.308625

$130.8625
500

$1.075153

$537.5765
1000

$0.890834

$890.834
2000

$0.829398

$1658.796
5000

$0.798674

$3993.37
10000

$0.767961

$7679.61

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXTU02N50D, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXTU02N50D and the required quantity in your RFQ. IICSEMI provides the latest quote for IXTU02N50D without requiring registration. Latest information on IXTU02N50D: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXTU02N50D latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	30Ohm @ 50mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 25µA
Supplier Device Package	TO-251AA
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	1.1W (Ta), 25W (Tc)
Series	Depletion
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTU02