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IXTY1R4N60P

IXYS

Product No:

IXTY1R4N60P

Manufacturer:

IXYS

Package:

TO-252AA

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 600V 1.4A TO252

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5.5V @ 25µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 50W (Tc)
Series PolarHV™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Mfr IXYS
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTY1

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