Home / Single FETs, MOSFETs / IXTY1R6N100D2

IXTY1R6N100D2

IXYS

Product No:

IXTY1R6N100D2

Manufacturer:

IXYS

Package:

TO-252AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 1.6A TO252

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IXTY1R6N100D2, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IXTY1R6N100D2 and the required quantity in your RFQ. IICSEMI provides the latest quote for IXTY1R6N100D2 without requiring registration. Latest information on IXTY1R6N100D2: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IXTY1R6N100D2 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	100W (Tc)
Series	Depletion
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTY1