Home / Single FETs, MOSFETs / IXTY1R6N50D2

IXTY1R6N50D2

IXYS

Product No:

IXTY1R6N50D2

Manufacturer:

IXYS

Package:

TO-252AA

Batch:

Datasheet:

Description:

MOSFET N-CH 500V 1.6A TO252

Quantity:

Delivery:

Payment:

In Stock : 20567

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.8025

$2.8025
10

$2.51655

$25.1655
100

$2.0615

$206.15
500

$1.754916

$877.458
1000

$1.480052

$1480.052
2000

$1.406048

$2812.096
5000

$1.35319

$6765.95

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	23.7 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.3Ohm @ 800mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-252AA
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	100W (Tc)
Series	Depletion
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTY1