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JANTXV2N6766

Microsemi Corporation

Product No:

JANTXV2N6766

Manufacturer:

Microsemi Corporation

Package:

TO-3

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Description:

MOSFET N-CH 200V 30A TO3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	90mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-3
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Series	Military, MIL-PRF-19500/543
Package / Case	TO-204AE
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk