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MSCSM170HRM11NG

Microchip Technology

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MSCSM170HRM11NG

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Microchip Technology

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PM-MOSFET-SIC-SP6C

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	Silicon Carbide (SiC)
Configuration	4 N-Channel (Three Level Inverter)
Input Capacitance (Ciss) (Max) @ Vds	13200pF @ 1000V, 6040pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	712nC @ 20V, 464nC @ 20V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	3.2V @ 10mA, 2.8V @ 6mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1700V (1.7kV), 1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1.012kW (Tc), 662W (Tc)
Current - Continuous Drain (Id) @ 25°C	226A (Tc), 163A (Tc)
Mfr	Microchip Technology
Package	Bulk