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MT3S111TU,LF

Toshiba Semiconductor and Storage

Product No:

MT3S111TU,LF

Package:

UFM

Batch:

-

Datasheet:

-

Description:

RF SIGE NPN BIPOLAR TRANSISTOR N

Quantity:

Delivery:

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Payment:

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In Stock : 2940

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5605

    $0.5605

  • 10

    $0.494

    $4.94

  • 25

    $0.44612

    $11.153

  • 100

    $0.39026

    $39.026

  • 250

    $0.342456

    $85.614

  • 500

    $0.302632

    $151.316

  • 1000

    $0.238916

    $238.916

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for MT3S111TU,LF, please feel free to contact us. To facilitate the processing of your inquiry, kindly include MT3S111TU,LF and the required quantity in your RFQ. IICSEMI provides the latest quote for MT3S111TU,LF without requiring registration. Latest information on MT3S111TU,LF: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs MT3S111TU,LF latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
Frequency - Transition 10GHz
Current - Collector (Ic) (Max) 100mA
Mounting Type Surface Mount
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 6V
Supplier Device Package UFM
Series -
Transistor Type NPN
Package / Case 3-SMD, Flat Lead
Power - Max 800mW
Mfr Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Package Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Gain 12.5dB
Base Product Number MT3S111

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