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NDP6060L

Fairchild Semiconductor

Product No:

NDP6060L

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 4

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Parameter Info

User Guide

Operating Temperature	-65°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	20mOhm @ 24A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	100W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk