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NP82N10PUF-E1-AY

Renesas

Product No:

NP82N10PUF-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3

Batch:

Datasheet:

Description:

NP82N10PUF-E1-AY - MOS FIELD EFF

Quantity:

Delivery:

Payment:

In Stock : 6400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

121

$2.3655

$286.2255

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15mOhm @ 41A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.3V @ 250µA
Supplier Device Package	TO-263-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.8W (Ta), 150W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Mfr	Renesas
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5.8V, 10V
Package	Bulk