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NTD4979N-35G

onsemi

Product No:

NTD4979N-35G

Manufacturer:

onsemi

Package:

I-PAK

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 9.4A/41A IPAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc)
Series -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number NTD4979

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