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NTH4L028N170M1

onsemi

Product No:

NTH4L028N170M1

Manufacturer:

onsemi

Package:

TO-247-4L

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Datasheet:

Description:

SIC MOSFET 1700 V 28 MOHM M1 SER

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 60A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 20mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	535W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	81A (Tc)
Mfr	onsemi
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	NTH4L02