NTH4L040N120M3S
onsemi
Product No:
NTH4L040N120M3S
Manufacturer:
Package:
TO-247-4L
Batch:
-
Datasheet:
Description:
SILICON CARBIDE (SIC) MOSFET ELI
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 20A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.4V @ 10mA |
| Supplier Device Package | TO-247-4L |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 231W (Tc) |
| Series | - |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Mfr | onsemi |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
Detail Info
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NTH4L040N120M3S Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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