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NTMD6601NR2G

onsemi

Product No:

NTMD6601NR2G

Manufacturer:

onsemi

Package:

8-SOIC

Batch:

-

Datasheet:

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Description:

MOSFET 2N-CH 80V 1.1A 8SOIC

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 215mOhm @ 2.2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 80V
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 600mW
Current - Continuous Drain (Id) @ 25°C 1.1A
Mfr onsemi
Package Tape & Reel (TR)
Base Product Number NTMD66

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