Home / Single FETs, MOSFETs / NTMT045N065SC1

NTMT045N065SC1

onsemi

Product No:

NTMT045N065SC1

Manufacturer:

onsemi

Package:

4-TDFN (8x8)

Batch:

Datasheet:

Description:

SILICON CARBIDE (SIC) MOSFET - 3

Quantity:

Delivery:

Payment:

In Stock : 500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$15.409

$15.409
10

$13.57075

$135.7075
100

$11.73725

$1173.725
500

$10.636846

$5318.423

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NTMT045N065SC1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NTMT045N065SC1 and the required quantity in your RFQ. IICSEMI provides the latest quote for NTMT045N065SC1 without requiring registration. Latest information on NTMT045N065SC1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NTMT045N065SC1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1870 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 25A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 8mA
Supplier Device Package	4-TDFN (8x8)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	187W (Tc)
Series	-
Package / Case	4-PowerTSFN
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tape & Reel (TR)
Base Product Number	NTMT045