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NVD6416ANLT4G

Fairchild Semiconductor

Product No:

NVD6416ANLT4G

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 19A DPAK

Quantity:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 71W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk

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