Home / Single FETs, MOSFETs / NVH4L022N120M3S

NVH4L022N120M3S

onsemi

Product No:

NVH4L022N120M3S

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

Datasheet:

Description:

SIC MOS TO247-4L 22MOHM 1200V

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for NVH4L022N120M3S, please feel free to contact us. To facilitate the processing of your inquiry, kindly include NVH4L022N120M3S and the required quantity in your RFQ. IICSEMI provides the latest quote for NVH4L022N120M3S without requiring registration. Latest information on NVH4L022N120M3S: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs NVH4L022N120M3S latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3175 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	151 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 20mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	352W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube