NXV90EPR

Nexperia USA Inc.

Product No:

NXV90EPR

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Package:

TO-236AB

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Description:

NXV90EP/SOT23/TO-236AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	120mOhm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-236AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	340mW (Ta), 2.1W (Tc)
Series	TrenchMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)