Home / Single, Pre-Biased Bipolar Transistors / PDTA114EMB,315

PDTA114EMB,315

NXP USA Inc.

Product No:

PDTA114EMB,315

Manufacturer:

NXP USA Inc.

Package:

DFN1006B-3

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Datasheet:

Description:

NOW NEXPERIA PDTA114 - SMALL SIG

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Product Information

Parameter Info

User Guide

Frequency - Transition	180 MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Resistor - Base (R1)	10 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	DFN1006B-3
Series	-
Transistor Type	PNP - Pre-Biased
Package / Case	3-XFDFN
Power - Max	250 mW
Resistor - Emitter Base (R2)	10 kOhms
Mfr	NXP USA Inc.
Current - Collector Cutoff (Max)	1µA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Base Product Number	PDTA114