Home / Single, Pre-Biased Bipolar Transistors / PDTB114ETR

PDTB114ETR

NXP Semiconductors

Product No:

PDTB114ETR

Manufacturer:

NXP Semiconductors

Package:

TO-236AB

Batch:

Datasheet:

Description:

PDTB114ET - 500 MA, 50 V PNP RES

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PDTB114ETR, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PDTB114ETR and the required quantity in your RFQ. IICSEMI provides the latest quote for PDTB114ETR without requiring registration. Latest information on PDTB114ETR: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PDTB114ETR latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Frequency - Transition	140 MHz
Current - Collector (Ic) (Max)	500 mA
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Resistor - Base (R1)	10 kOhms
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	TO-236AB
Series	-
Transistor Type	PNP - Pre-Biased
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	320 mW
Resistor - Emitter Base (R2)	10 kOhms
Mfr	NXP Semiconductors
Current - Collector Cutoff (Max)	500nA
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Base Product Number	PDTB114