Home / Single, Pre-Biased Bipolar Transistors / PDTC123JQB-QZ

PDTC123JQB-QZ

Nexperia USA Inc.

Product No:

PDTC123JQB-QZ

Manufacturer:

Nexperia USA Inc.

Package:

DFN1110D-3

Batch:

Datasheet:

Description:

PDTC123JQB-Q/SOT8015/DFN1110D-

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.266

$0.266
10

$0.1843

$1.843
100

$0.089965

$8.9965
500

$0.075012

$37.506
1000

$0.052117

$52.117
2000

$0.045172

$90.344

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Product Information

Parameter Info

User Guide

Frequency - Transition	230 MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Resistor - Base (R1)	2.2 kOhms
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	DFN1110D-3
Series	Automotive, AEC-Q101
Transistor Type	NPN - Pre-Biased
Package / Case	3-XDFN Exposed Pad
Power - Max	340 mW
Resistor - Emitter Base (R2)	47 kOhms
Mfr	Nexperia USA Inc.
Current - Collector Cutoff (Max)	100nA
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Base Product Number	PDTC123

Detail Info

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