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PHK12NQ10T,518

NXP USA Inc.

Product No:

PHK12NQ10T,518

Manufacturer:

NXP USA Inc.

Package:

8-SO

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Datasheet:

Description:

MOSFET N-CH 100V 11.6A 8SO

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Product Information

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User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	28mOhm @ 6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	8.9W (Tc)
Series	TrenchMOS™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.6A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PHK12