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PHM25NQ10T,518

NXP USA Inc.

Product No:

PHM25NQ10T,518

Manufacturer:

NXP USA Inc.

Package:

8-HVSON (5x6)

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Datasheet:

Description:

MOSFET N-CH 100V 30.7A 8HVSON

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	26.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-HVSON (5x6)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	62.5W (Tc)
Series	TrenchMOS™
Package / Case	8-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30.7A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PHM25